| PART |
Description |
Maker |
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| CF004_06 CF004 CF004-01 CF004-02 CF004-03 |
GaAs Pseudomorphic HEMT and MESFET Chips KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
Mimix Broadband, Inc.
MIMIX[Mimix Broadband]
|
| NE72218 NE72218-T1 |
C TO X BAND N-CHANNEL GaAs MESFET
|
California Eastern Labs
|
| NEZ1011-3E |
X BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| NEZ1414-2E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| NEZ6472-15DL |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
Electronics Industry Public Company Limited
|
| MWT-3HP |
K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
|
MICROWAVE TECHNOLOGY INC
|
| NEZ7785-15DL |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET HERMETIC SEALED, T-65, 2 PIN
|
NEC, Corp.
Electronics Industry Public Company Limited
|
| NE67483B |
(NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
|
CEL
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| KGL4205 |
10-Gbps D-Flip Flop IC 0.2μm Gate Length GaAs MESFET Technology
10-Gbps D-Flip Flop IC 0.2レm Gate Length GaAs MESFET Technology
10-Gbps D-Flip Flop IC 0.2m Gate Length GaAs MESFET Technology
|
OKI[OKI electronic componets]
OKI electronic components
|
| NE-720 |
General Purpose GaAs MESFET
|
NEC
General Purpose GaAs MESFET
|
